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APT26M100JCU2
ISOTOP(R) Boost chopper
MOSFET + SiC chopper diode Power module
K
VDSS = 1000V RDSon = 330m typ @ Tj = 25C ID = 26A @ Tc = 25C
Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction * Brake switch Features
D
G
*
S
Power MOS 8TM MOSFET - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated
S D
K
* SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF * * * ISOTOP(R) Package (SOT-227) Very low stray inductance High level of integration
G
ISOTOP(R)
Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant Max ratings 1000 26 20 140 30 396 543 18 Unit V A V m W A
September, 2009 1-5 APT26M100JCU2 - Rev 0
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25C Tc = 80C
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APT26M100JCU2
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions Tj = 25C VDS =1000V VGS = 0V Tj = 125C VGS = 10V, ID = 18A VGS = VDS, ID = 2.5mA VGS = 30 V Min Typ Max 100 500 396 5 100 Unit A m V nA
3
330 4
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 18A Resistive switching @ 25C VGS = 15V VBus = 667V ID = 18A RG = 2.2 Min Typ 7868 825 104 305 55 145 44 40 150 38 ns nC Max Unit pF
SiC chopper diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF QC C Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Total Capacitive Charge Total Capacitance IF = 10A Test Conditions VR=1200V Tj = 25C Tj = 175C Tc = 100C Tj = 25C Tj = 175C Min 1200 Typ 32 56 10 1.6 2.3 80 96 69 Max 200 1000 1.8 3 Unit V A A V nC pF
IF = 10A, VR = 600V di/dt =500A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V
Symbol Characteristic RthJC RthJA VISOL TJ,TSTG TL Torque Wt Junction to Case Thermal Resistance Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min Mosfet SiC Diode 2500 -40
Typ
Max 0.23 1.65 20 150 300 1.5
Unit C/W V C N.m g
Storage Temperature Range Max Lead Temp for Soldering:0.063" from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight
29.2
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2-5
APT26M100JCU2 - Rev 0
September, 2009
Thermal and package characteristics
APT26M100JCU2
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
Cathode
Drain
* Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal.
Source
Dimensions in Millimeters and (Inches)
Gate
Typical Mosfet Performance Curve
Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 0.25 Thermal Impedance (C/W)
0.9
0.2
0.7
0.15
0.5
0.1 0.05
0.3 0.1 0.05 Single P ulse
0 0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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3-5
APT26M100JCU2 - Rev 0
September, 2009
APT26M100JCU2
Low Voltage Output Characteristics 60
VGS=10V
Low Voltage Output Characteristics 40 35
TJ=125C
ID, Drain Current (A)
TJ=25C
ID, Drain Current (A)
50 40 30 20 10 0 0 5
30 25 20
VGS=6, 7, 8 &9V
TJ=125C
5V
15 10 5 0
4.5V
10
15
20
0
5
10
15
20
25
30
VDS, Drain to Source Voltage (V) Normalized RDSon vs. Temperature RDSon, Drain to Source ON resistance
VDS, Drain to Source Voltage (V) Transfert Characteristics 40 ID, Drain Current (A)
VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
3 2.5 2 1.5 1 0.5 0 25 50 75 100 125 150
VGS=10V ID=18A
30
TJ=125C
20
10
TJ=25C
0 1 2 3 4 5 6 VGS, Gate to Source Voltage (V)
TJ, Junction Temperature (C)
Gate Charge vs Gate to Source VGS, Gate to Source Voltage 12 10 8 6
VDS=800V ID=18A TJ=25C VDS=500V VDS=200V
Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) 10000 1000 100 10 1
Ciss
Coss Crss
4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC)
0
50
100
150
200
September, 2009 4-5 APT26M100JCU2 - Rev 0
VDS, Drain to Source Voltage (V)
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APT26M100JCU2
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.8 Thermal Impedance (C/W) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0 0.00001 0.3 0.7 0.5 0.9
Rectangular Pulse Duration (Seconds) Forward Characteristics Reverse Characteristics 100
TJ=25C
20
IF Forward Current (A)
16
TJ=75C
IR Reverse Current (A)
75
12 8 4 0 0 0.5 1 1.5 2 2.5 3 3.5
VF Forward Voltage (V) Capacitance vs.Reverse Voltage
TJ=125C
50
TJ=75C TJ=125C TJ=175C TJ=25C
25
TJ=175C
0 400
600
800
1000 1200 1400 1600
VR Reverse Voltage (V)
700 C, Capacitance (pF) 600 500 400 300 200 100 0
September, 2009 5-5 APT26M100JCU2 - Rev 0
1
10 100 VR Reverse Voltage
1000
ISOTOP(R) is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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